SELECTIVE EPITAXIAL-GROWTH IN SILICON ON INSULATOR - PLANARITY AND MASS-FLOW

被引：1
|
作者：
WILLIAMS, DA [1 ]
MCMAHON, RA [1 ]
AHMED, H [1 ]
GARRY, G [1 ]
KARAPIPERIS, L [1 ]
DIEUMEGARD, D [1 ]
机构：
[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期
关键词：
D O I：
10.1063/1.342602
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3718 / 3721
页数：4
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