RAMAN-SCATTERING FROM CURRENT CARRIERS IN SOLIDS

Raman scattering from free carriers in semiconductors is discussed. Different mechanisms of light scattering are considered on the basis of the integrated cross section analysis. The typical band structure of semiconductors is taken into account. It is demonstrated that the shape of Raman spectra allows one to define both the parameters of the band structure and the kinetic characteristics of the current carriers (diffusion coefficient, mobility, diffusivity, inter-valley relaxation time, components of the relaxation time tensor of different symmetry). Special attention is paid to p-materials with degenerate bands and to current carriers in superlattices.