FIELD-EFFECT TRANSISTORS USING ALKYL SUBSTITUTED OLIGOTHIOPHENES

被引：175
|
作者：
AKIMICHI, H
WARAGAI, K
HOTTA, S
KANO, H
SAKAKI, H
机构：
[1] Quantum Wave Project, Research Development Corporation of Japan (JRDC), Meguro-ku, Tokyo 153
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 14期
关键词：
D O I：
10.1063/1.105158
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Field-effect transistors (FETs) have been prepared using thin films of alkyl substituted oligothiophenes. These compounds bring about a significant increase in the source-drain channel current when compared to the conventional nonsubstituted oligothiophenes. The increased channel current mostly results from the enhanced carrier mobility of the material. We report that the FETs are readily made by a single routine process of casting or evaporation.
引用
收藏
页码：1500 / 1502
页数：3
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