GAS FUSION ANALYSIS OF OXYGEN IN SILICON - SEPARATION OF COMPONENTS

被引：9

作者：

SHAW, RW ^{[1
]}

BREDEWEG, R ^{[1
]}

ROSSETTO, P ^{[1
]}

机构：

[1] LECO INSTRUMENTS CORP,ST JOSEPH,MI 49085

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 02期

关键词：

Gas Fusion Analysis;

D O I：

10.1149/1.2085632

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

An investigation is reported into the origins of the oxygen evolutions observed in gas fusion analysis of oxygen in silicon. Oxygen evolution arising from surface contamination, surface oxide, and bulk oxygen have been identified. By maintaining the samples slightly below the melting temperature for 60s prior to melting, it was found that surface contaminants and oxide could be largely driven off and thereby separated from the bulk oxygen signal. However, a small component of surface oxide was found to carry over into the melting stage. Some instrumental causes for this carry over have been ruled out leaving as a possible explanation a highly stable oxygen containing surface phase.

引用

页码：582 / 585

页数：4

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