RADIATION-INDUCED TRIVALENT SILICON DEFECT BUILDUP AT THE SI-SIO2 INTERFACE IN MOS STRUCTURES

被引：61
|
作者：
LENAHAN, PM [1 ]
BROWER, KL [1 ]
DRESSENDORFER, PV [1 ]
JOHNSON, WC [1 ]
机构：
[1] PRINCETON UNIV, DEPT ELECT ENGN & COMP SCI, PRINCETON, NJ 08544 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期
关键词：
D O I：
10.1109/TNS.1981.4335683
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：4105 / 4106
页数：2
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