GAAS BUFFER LAYERS GROWN AT LOW SUBSTRATE TEMPERATURES USING AS2 AND THE FORMATION OF ARSENIC PRECIPITATES

被引：41
|
作者：
MELLOCH, MR [1 ]
MAHALINGAM, K [1 ]
OTSUKA, N [1 ]
WOODALL, JM [1 ]
WARREN, AC [1 ]
机构：
[1] IBM CORP,DIV RES,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90943-Y
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have grown GaAs layers by molecular beam epitaxy at low substrate temperatures (250-degrees-C) using the dimer arsenic source As2. Following a one hour anneal at 600-degrees-C, the GaAs layers were examined with transmission electron microscopy. The GaAs layers contained arsenic precipitates of average diameter 100 angstrom and density of 10(17) cm-3.
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页码：39 / 42
页数：4
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