THIN OXIDE FILM EFFECT ON SILICON N+P DIODES BREAKDOWN VOLTAGE

被引：0

作者：

MATSUMOTO, K

HANETA, Y

机构：

[1] NIPPON ELECT CO LTD,IC DIV,33-1 SHIBA GOCHOME,MINATO,TOKYO,JAPAN

[2] NIPPON ELECT KYUSHU LTD,KYUSHU,JAPAN

来源：

NEC RESEARCH & DEVELOPMENT | 1974年 / 35期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：21 / 25

页数：5

共 50 条

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