ION-IMPLANTATION OF OPTICAL-DEVICES

被引：8
|
作者：
BUCHAL, C
机构：
[1] Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich (KFA)
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 68卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(92)96106-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The use of accelerators for research and technology in the field of optical materials is outlined. We stress the application of ion beams of 1 to 10 MeV energy for optical waveguide formation and for waveguide doping. This includes ion beam mixing and doping of semiconductor heterostructures, doping of glass guides with laser active ions, guide formation in ceramic single crystals by MeV He implantation and the associated index modification by electronic and nuclear energy transfer. Recent results of RBS/channeling/PIXE studies of dopant lattice locations are also discussed.
引用
收藏
页码：355 / 360
页数：6
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