ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE

被引：47

作者：

BARAFF, GA ^{[1
]}

APPELBAUM, JA ^{[1
]}

HAMANN, DR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.569411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：999 / 1005

页数：7

共 12 条

[1] THEORETICAL-STUDY OF GAAS (100) SURFACE [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :751-756

[2] SELF-CONSISTENT ELECTRONIC-STRUCTURE OF SOLID SURFACES [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (06) :2166-+

[3] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1976, 14 (04) :1623-1632

[4] SI (100) SURFACE - THEORETICAL-STUDY OF UNRECONSTRUCTED SURFACE [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1975, 11 (10) :3822-3831

[5] SURFACE-INDUCED CHARGE DISTURBANCES IN FILLED BANDS [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1974, 10 (12) :4973-4979

[6] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1974, 32 (05) :225-228

[7] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J].

BARAFF, GA ;

APPELBAUM, JA .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :475-+

[8] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES [J].

DONNELLY, JP ;

MILNES, AG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) :63-+

[9] THE INTERFACE TRANSPORT PROPERTIES OF GE-GAAS HETEROJUNCTIONS [J].

ESAKI, L ;

HOWARD, WE ;

HEER, J .

SURFACE SCIENCE, 1964, 2 :127-135

[10] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES [J].

FRENSLEY, WR ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :810-815

← 1 2 →