Electron mobility in CdxHg1-xSe

被引：0

作者：

Malyk, O. P. ^{[1
]}

机构：

[1] Lviv Polytech Natl Univ, Semicond Elect Dept, 12 Bandera Str, UA-79013 Lvov, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2009年 / 12卷 / 03期

关键词：

cadmium-mercury-selenium solid solution; charge carrier scattering;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg1-xSe (0 <= x <= 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the framework of the precise solution of the stationary Boltzmann equation on the base of short-range principle, temperature dependences of the electron mobility within the range 4.2 - 300 K are calculated. A good coordination of the theory to experiment in the investigated temperature range is established.

引用

页数：4

共 50 条

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[8] ELASTIC-CONSTANTS AND PHASE-TRANSITION OF CDXHG1-XSE
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