COULOMB-BLOCKADE IN THE INVERSION LAYER OF A SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH A DUAL-GATE STRUCTURE

被引：34
|
作者：
MATSUOKA, H
ICHIGUCHI, T
YOSHIMURA, T
TAKEDA, E
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期
关键词：
D O I：
10.1063/1.111085
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the transport properties of artificially squeezable inversion layers in a Si metal-oxide-semiconductor field-effect-transistor with a dual-gate structure. Increasing the potential barrier height with constant intervals along the one-dimensional channel gradually transforms a simple quantum wire into coupled quantum dots. The clear change in transport properties has been observed by changing the tunnel barrier height at low temperatures. The experimental results are discussed in terms of one-dimensional subbands and the Coulomb blockade of single-electron tunneling.
引用
收藏
页码：586 / 588
页数：3
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