BONDING ELECTRON-DISTRIBUTION IN SILICON

被引：15
|
作者：
FEHLMANN, M
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1979年 / 47卷 / 01期
关键词：
D O I：
10.1143/JPSJ.47.225
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：225 / 231
页数：7
相关论文
共 50 条
  • [1] EXPERIMENTAL ELECTRON-DISTRIBUTION IN SILICON
    YANG, YW
    COPPENS, P
    SOLID STATE COMMUNICATIONS, 1974, 15 (09) : 1555 - 1559
  • [2] BONDING ELECTRON-DISTRIBUTION OF GAP, GAAS AND GASB
    UNO, R
    ISHIGAKI, J
    OZAWA, H
    YUKINO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (04): : 573 - 576
  • [3] ELECTRON-DISTRIBUTION IN SILICON .1. EXPERIMENT
    ALDRED, PJE
    HART, M
    PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) : 223 - +
  • [4] ELECTRON-DISTRIBUTION IN SILICON .2. THEORETICAL INTERPRETATION
    ALDRED, PJE
    HART, M
    PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) : 239 - 254
  • [5] THE ELECTRON-DISTRIBUTION IN SILICON - A COMPARISON BETWEEN EXPERIMENT AND THEORY
    SPACKMAN, MA
    ACTA CRYSTALLOGRAPHICA SECTION A, 1986, 42 : 271 - 281
  • [6] ELECTRON-DISTRIBUTION AND BONDING IN ETA(3)-CYCLOPROPENYL METAL-COMPLEXES
    LICHTENBERGER, DL
    HOPPE, ML
    SUBRAMANIAN, L
    KOBER, EM
    HUGHES, RP
    HUBBARD, JL
    TUCKER, DS
    ORGANOMETALLICS, 1993, 12 (06) : 2025 - 2031
  • [7] ELECTRON-DISTRIBUTION IN BN
    WEISS, RJ
    PHILOSOPHICAL MAGAZINE, 1974, 29 (05): : 1029 - 1032
  • [8] ELECTRON-DISTRIBUTION IN VANADIUM
    WEISS, RJ
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05): : 645 - 648
  • [9] ELECTRON-DISTRIBUTION IN GASB
    UNO, R
    ISHIGAKI, J
    OZAWA, H
    ACTA CRYSTALLOGRAPHICA SECTION A, 1984, 40 : C164 - C164
  • [10] STRATIFICATION OF THE FIELD IN A SHORT SILICON SAMPLE IN THE CASE OF A MULTIVALUED ELECTRON-DISTRIBUTION
    GIGUASHVILI, GV
    SARBEI, OG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 664 - 666
12345