INFLUENCE OF PLASMA-OSCILLATIONS ON THERMAL EMISSION-SPECTRUM OF DOPED SEMICONDUCTORS

Frequency dispersion of the reflection factor of doped semiconductors in the plasma resonance region leads to a notable deformation of spectra of their thermal emission (TE) as compared with a blackbody spectrum, even in optically thick crystals. Certain characteristics of polarization and angular dependencies of emission originate. The experiment has been carried out on n-GaAs and n-InSb specimens (10(18) less-than-or-equal-to N(d) - N(a) less-than-or-equal-to 10(19) cm-3) in the spectral region of 5-20 mum at T = 320-370 K. The TE observation angle variation, the polarization direction selection and the doping level variation have been shown to allow the formation of TE with preselected parameters and, particularly, the development of a "white noise" source for a preset spectral range.