RADIATION-DAMAGE IN ION-IMPLANTED VANADIUM

被引：25

作者：

GETTINGS, M ^{[1
]}

MEYER, O ^{[1
]}

LINKER, G ^{[1
]}

机构：

[1] KERN FORSCH SZENTRUM,INST ANGEW KERN PHYS,KARLSRUHE,WEST GERMANY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1974年 / 21卷 / 01期

关键词：

D O I：

10.1080/10420157408230811

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：51 / 59

页数：9

共 17 条

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[8]

Mayer J. W., 1970, ION IMPLANTATION SEM

[9] ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS [J].

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[10]

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