ELECTRON EMISSION FROM CORE AND VALENCE STATES OF SOME SEMICONDUCTORS

被引：8

作者：

LANGER, DW

机构：

[1] Aerospace Research Laboratories, Wright-Patterson AFB, Ohio

来源：

ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE | 1969年 / A 24卷 / 10期

关键词：

D O I：

10.1515/zna-1969-1015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Measurements of the energy distributions of emitted electrons from Si, GaP, and ZnS allowed the determination of the relative positions of some core levels of these materials and the optical density of states of the valence band in Si. These energy levels were determined relative to the Fermi level. The electron emission was induced by monochromatic X-rays (AlKa). These results are compared with values obtained from OPW calculations for the valence bands and selfconsistent Hartree-Fock-Slater calculations for the core states. © 1969, Walter de Gruyter. All rights reserved.

引用

页码：1555 / &