AN ANALYTICAL DEEP-SUBMICRON MOS DEVICE MODEL CONSIDERING VELOCITY OVERSHOOT BEHAVIOR USING ENERGY-BALANCE EQUATION

被引：11

作者：

SIM, JH

机构：

[1] Memory Division, Samsung Electronics Co., Yongin-Gun, Kyungki-Do

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 05期

关键词：

D O I：

10.1109/16.381981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to evaluate the velocity overshoot phenomenon in the deep submicron MOS devices, the energy balance equation should be incorporated with the drift-diffusion equation that includes thermoelectric diffusion. This paper presents an analytical current model for deep submicron MOS devices by solving the energy balance equation. Our model results show good agreement with experimental results. We have successfully derived the drain current model composed of drift and thermoelectric currents.

引用

页码：864 / 869

页数：6

共 14 条

[1] A compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport
Wu, HC
Kuo, JB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (02) : 417 - 422
[2] Compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport
Natl Taiwan Univ, Taipei, Taiwan
IEEE Trans Electron Devices, 2 (417-422):
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Lim, KY
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MICROELECTRONICS RELIABILITY, 2002, 42 (12) : 1857 - 1864
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CHOI, WS
ASSADERAGHI, F
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MIN, HS
HU, CM
DUTTON, RW
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (07) : 333 - 335
[5] A CLOSED-FORM PHYSICAL DRAIN CURRENT MODEL CONSIDERING ENERGY-BALANCE EQUATION AND SOURCE RESISTANCE FOR DEEP-SUBMICRON N-CHANNEL METAL-OXIDE-SEMICONDUCTOR DEVICES
MA, SY
KUO, JB
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11): : 6141 - 6147
[6] AN INTEGRATED EFFICIENT METHOD FOR DEEP-SUBMICRON EPROM FLASH DEVICE SIMULATION USING ENERGY-TRANSPORT MODEL
PENG, JZ
LONGCOR, S
FREY, J
IEICE TRANSACTIONS ON ELECTRONICS, 1994, E77C (02) : 166 - 173
[7] Experimentally-based analytical model of deep-submicron LDD pMOSFET's in a Bi-MOS hybrid-mode environment
Rofail, SS
Yeo, KS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (09) : 1473 - 1482
[8] CONCISE ANALYTICAL MODEL FOR DEEP-SUBMICRON N-CHANNEL METAL-OXIDE-SEMICONDUCTOR DEVICES WITH CONSIDERATION OF ENERGY-TRANSPORT
MA, SY
KUO, JB
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B): : 550 - 553
[9] AN ANALYTICAL DRAIN CURRENT MODEL CONSIDERING BOTH ELECTRON AND LATTICE TEMPERATURES SIMULTANEOUSLY FOR DEEP-SUBMICRON ULTRATHIN SOI NMOS DEVICES WITH SELF-HEATING
CHEN, YG
MA, SY
KUO, JB
YU, ZP
DUTTON, RW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) : 899 - 906
[10] Analytical velocity overshoot model for 0.1 μm N-channel metal-oxide-silicon devices considering energy transport
Natl Taiwan Univ, Taipei, Taiwan
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 5 A (2573-2577):

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