CONTROL OF INSULATOR-SEMICONDUCTOR INTERFACES OF INP AND INGAAS FOR SURFACE PASSIVATION AND MISFET FABRICATION

被引：0
|
作者：
HASEGAWA, H
机构：
来源：
FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES | 1989年 / 1144卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：150 / 164
页数：15
相关论文
共 50 条
  • [1] ELECTRONIC PROPERTIES OF INSULATOR-SEMICONDUCTOR INTERFACES
    KOCH, F
    SURFACE SCIENCE, 1979, 80 (01) : 110 - 124
  • [2] CONTROL OF GAAS AND INGAAS INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES BY ULTRATHIN MOLECULAR-BEAM EPITAXY SI LAYERS
    AKAZAWA, M
    ISHII, H
    HASEGAWA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (12B): : 3744 - 3749
  • [3] Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures
    Dmitriev, SG
    Markin, YV
    SEMICONDUCTORS, 2002, 36 (02) : 197 - 202
  • [4] Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures
    S. G. Dmitriev
    Yu. V. Markin
    Semiconductors, 2002, 36 : 197 - 202
  • [5] Photovoltage Reversal in Organic Optoelectronic Devices with Insulator-Semiconductor Interfaces
    Hu, Laigui
    Jin, Wei
    Feng, Rui
    Zaheer, Muhammad
    Nie, Qingmiao
    Chen, Guoping
    Qiu, Zhi-Jun
    Cong, Chunxiao
    Liu, Ran
    MATERIALS, 2018, 11 (09)
  • [6] STATISTICS FOR THE INTERPRETATION OF DEEP LEVEL TRANSIENT SPECTROSCOPY ON INSULATOR-SEMICONDUCTOR INTERFACES
    ENGSTROM, O
    SHIVARAMAN, MS
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) : 3929 - 3930
  • [7] Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors
    Hasegawa, H., 1600, (41-42):
  • [8] ELECTRON EJECTION PROCESSES AT INSULATOR-SEMICONDUCTOR INTERFACES IN ACTFEL DISPLAY DEVICES
    BHASKARAN, S
    SINGH, VP
    MORTON, DC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (10) : 1756 - 1762
  • [9] TRANSIENT-BEHAVIOR OF INTERFACE STATE CONTINUUM AT INP INSULATOR-SEMICONDUCTOR INTERFACE
    HASEGAWA, H
    MASUDA, H
    OHNO, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C431 - C431
  • [10] Surface passivation of InP/InGaAs heterojunction bipolar transistors
    Ng, WK
    Tan, CH
    Houston, PA
    Krysa, A
    Tahraoui, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (06) : 720 - 724
12345