MIS CAPACITANCE AND DERIVATIVE OF CAPACITANCE, WITH APPLICATION TO NONPARABOLIC BAND SEMICONDUCTORS

被引：16
|
作者：
MICHAEL, M [1 ]
LEONARD, WF [1 ]
机构：
[1] SO METHODIST UNIV,INST TECHNOL,DEPT ELECT ENGN,DALLAS,TX 75275
来源：
SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 01期
关键词：
D O I：
10.1016/0038-1101(74)90115-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：71 / 85
页数：15
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