SILICON-ON-SAPPHIRE WITH MICROSECOND CARRIER LIFETIMES

被引：10

作者：

SCHRODER, DK ^{[1
]}

RAICHOUD.P ^{[1
]}

机构：

[1] WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 09期

关键词：

D O I：

10.1063/1.1654710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：455 / 457

页数：3

共 50 条

[1] CARRIER MOBILITY IN LASER-ANNEALED SILICON-ON-SAPPHIRE FILMS
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[9] TEMPERATURE-DEPENDENCE OF THE PICOSECOND CARRIER RELAXATION IN SILICON-IRRADIATED SILICON-ON-SAPPHIRE FILMS
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[10] Silicon-on-Sapphire, a Replacement for Gallium Arsenide?
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