PATTERNING OF POLYIMIDE PRECURSOR LANGMUIR-BLODGETT-FILMS AND THEIR APPLICATION AS DEEP UV RESISTS

Polyimide precursor Langmuir-Blodgett (LB) films can be patterned by conventional photolithographic techniques utilizing deep UV light. The patterned polyimide precursor LB films can successfully be converted to corresponding patterned polyimide films. Furthermore, these LB films are positive resists with a resolution of 0.4-mu-m and a sensitivity of around 3.5 J cm-2. Patterned LB films with a thickness of only 80 nm have good plasma etch resistance. This suggests that polyimide precursor LB films have potential for the fabrication of electronic devices with a feature size of less than half a micrometer, and might be a suitable resist for excimer laser lithography.