共 50 条
- [1] Behavior of excess arsenic in undoped, semi-insulating GaAs during ingot annealing Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (12 A):
- [4] Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy PHYSICAL REVIEW B, 1996, 53 (15): : 9814 - 9830
- [5] Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy Physical Review B: Condensed Matter, 53 (15):
- [6] OPTICALLY INDUCED EXCESS HOLE POPULATION IN SEMI-INSULATING GAAS PHYSICAL REVIEW B, 1990, 42 (18): : 11762 - 11767
- [8] Field effect on positron diffusion in semi-insulating GaAs PHYSICAL REVIEW B, 1996, 54 (03): : 1982 - 1986
- [10] Investigations on semi-insulating GaAs by surface photovoltaic spectroscopy Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 2000, 19 (01): : 15 - 18