EVALUATION OF THE 3-LEVEL CHARGE PUMPING TECHNIQUE FOR CHARACTERIZING INTERFACE TRAPS

被引：16
|
作者：
SAKS, NS [1 ]
ANCONA, MG [1 ]
CHEN, WL [1 ]
机构：
[1] YALE UNIV, NEW HAVEN, CT 06520 USA
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期
关键词：
D O I：
10.1063/1.107048
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Emission cross sections of Si-SiO2 interface traps have been measured as a function of trap energy with the new 3-level charge pumping technique and with standard admittance techniques. Good agreement between the different techniques is obtained, thereby validating 3-level charge pumping as a tool for characterizing interface traps.
引用
收藏
页码：2261 / 2263
页数：3
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