EXCESS NOISE IN SEMICONDUCTORS

被引：0
|
作者：
GANEFELD, RV
REPA, II
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 3卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：22 / &
相关论文
共 50 条
  • [1] A Percolative Approach to Transport and Excess Noise in Polyacene Semiconductors
    Pennetta, C.
    Carbone, A.
    Tizzoni, M.
    Reggiani, L.
    2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010), 2010, : 23 - 26
  • [2] UNIVERSAL MECHANISM OF GENERATION OF EXCESS NOISE IN INHOMOGENEOUS SEMICONDUCTORS
    LOSEV, VV
    OKSMAN, YA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 442 - &
  • [3] Analytical Frequency-Dependent Formulas of Excess Noise in Homogeneous Semiconductors
    Park, Chan Hyeong
    Hong, Sung-Min
    NOISE AND FLUCTUATIONS, 2009, 1129 : 589 - +
  • [4] DECAY OF EXCESS CARRIERS IN SEMICONDUCTORS
    NOMURA, KC
    BLAKEMORE, JS
    PHYSICAL REVIEW LETTERS, 1958, 1 (11) : 427 - 427
  • [5] THE PARAMETERS OF SIMPLE EXCESS SEMICONDUCTORS
    LANDSBERG, PT
    MACKAY, RW
    MCRONALD, AD
    PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1951, 64 (377): : 476 - 480
  • [6] DECAY OF EXCESS CARRIERS IN SEMICONDUCTORS
    NOMURA, KC
    BLAKEMORE, JS
    PHYSICAL REVIEW, 1958, 112 (05): : 1607 - 1615
  • [7] RECOMBINATION OF EXCESS CARRIERS IN SEMICONDUCTORS
    OKADA, JI
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (12) : 1338 - 1344
  • [8] Decay of Excess Carriers in Semiconductors
    Gardavsky, J.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (04): : 939 - 949
  • [9] Is it possible to suppress noise by noise in semiconductors?
    Varani, L
    Palermo, C
    De Vasconcelos, C
    Millithaler, JF
    Vaissiére, JC
    Nougier, JP
    Starikov, E
    Shiktorov, P
    Gruzhinskis, V
    Unsolved Problems of Noise and Fluctuations, 2005, 800 : 474 - 479
  • [10] SHOT NOISE IN SEMICONDUCTORS
    VANDERZIEL, A
    PHYSICAL REVIEW, 1953, 89 (04): : 900 - 900
12345