PULSED-LASER INDUCED ABLATION APPLIED TO EPITAXIAL-GROWTH OF SEMICONDUCTOR-MATERIALS - SELENIDES AND TELLURIDES PLUME ANALYSIS

被引：21
|
作者：
TEGHIL, R
GUIDONI, AG
MELE, A
PICCIRILLO, S
CORENO, M
MAROTTA, V
DIPALMA, TM
机构：
[1] CNR,IST MAT SPECIALI,TITO SCALO,ITALY
[2] UNIV ROMA LA SAPIENZA,DIPARTIMENTO CHIM,I-00185 ROME,ITALY
来源：
SURFACE AND INTERFACE ANALYSIS | 1994年 / 22卷 / 1-12期
关键词：
D O I：
10.1002/sia.740220140
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study the analysis of ionic and neutral species produced by the interaction between laser radiation and SnSe and SnTe targets is reported. Time of flight mass spectrometry and emission spectroscopy are used for the characterization of the ablated material. Relations between target and plume composition are discussed in order to improve the understanding of the laser deposition process.
引用
收藏
页码：181 / 185
页数：5
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