OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE

被引：116
|
作者：
GYULAI, J
MAYER, JW
MITCHELL, IV
RODRIGUEZ, V
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 08期
关键词：
D O I：
10.1063/1.1653422
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：332 / +
页数：1
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