MECHANISMS OF EPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS

被引：0
|
作者：
WEINSTEI.M
WOLFF, GA
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1967年 / S卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：537 / &
相关论文
共 50 条
  • [21] Theory of VLS Growth of Compound Semiconductors
    Dubrovskii, Vladimir G.
    SEMICONDUCTOR NANOWIRES I: GROWTH AND THEORY, 2015, 93 : 1 - 78
  • [22] MECHANISMS OF EPITAXIAL-GROWTH
    MARKOV, I
    STOYANOV, S
    CONTEMPORARY PHYSICS, 1987, 28 (03) : 267 - 320
  • [23] LOW TEMPERATURE AND HIGH DEPOSITION RATE EPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS BY PLASMA-ASSISTED EPITAXY.
    Matsushita, Koichi
    Sato, Yasushi
    Hariu, Takashi
    Shibata, Yukio
    Shinku/Journal of the Vacuum Society of Japan, 1984, 27 (07): : 569 - 580
  • [24] Ion beam induced epitaxial regrowth and interfacial amorphization of compound semiconductors
    Glaser, E
    Fehlhaber, T
    Schulz, R
    Bachmann, T
    Gaiduk, P
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 175 - 185
  • [25] Defects in epitaxial layers of compound semiconductors grown by OMVPE and MBE techniques
    Dept. of Chem., Bio and Mat. Eng., Arizona State University, Tempe, AZ 85287, United States
    Prog Mater Sci, 1-4 (341-355):
  • [26] Defects in epitaxial layers of compound semiconductors grown by OMVPE and MBE techniques
    Mahajan, S
    PROGRESS IN MATERIALS SCIENCE, 1997, 42 (1-4) : 341 - 355
  • [27] Ion beam induced epitaxial regrowth and interfacial amorphization of compound semiconductors
    Glaser, E
    Fehlhaber, T
    Schulz, R
    Bachmann, T
    MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES, 1997, 248-2 : 79 - 86
  • [28] NUCLEATION MECHANISMS FOR COMPOUND SEMICONDUCTORS GROWN ON SI BY MOCVD
    SOGA, T
    GEORGE, T
    JIMBO, T
    UMENO, M
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 418 - 422
  • [29] Low temperature epitaxial growth of semiconductors and ceramics.
    Cahill, DG
    VanNostrand, JE
    Karr, BW
    Petrov, I
    Greene, JE
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 32 - PHYS
  • [30] FORMATION AND GROWTH OF THIN EPITAXIAL FILMS (HOMOEPITAXY OF SEMICONDUCTORS)
    ALEXANDROV, LN
    SIDOROV, YG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (04): : 571 - +
12345