共 50 条
- [1] SPECTRUM OF 2-PHOTON INTERBAND ABSORPTION OF LASER-RADIATION IN GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 159 - 163
- [2] MODIFICATION OF THE SPECTRUM OF SHALLOW STATES IN GALLIUM-ARSENIDE BY THE ACTION OF LASER-RADIATION PULSES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (07): : 738 - 739
- [3] SELF-TRANSPARENCY IN GALLIUM-ARSENIDE ON 2-PHOTON INTERACTION WITH AN ULTRASHORT LIGHT PULSE ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1973, 64 (02): : 446 - 452
- [4] IMPURITY-LEVEL-ASSISTED 2-PHOTON INTERBAND ABSORPTION OF LASER-RADIATION IN SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (05): : 567 - 568
- [5] 2-PHOTON ABSORPTION EFFICIENCY IN FIELD OF SINGLE-FREQUENCY AND MULTIFREQUENCY LASER-RADIATION KVANTOVAYA ELEKTRONIKA, 1977, 4 (05): : 1105 - 1109
- [7] LINEAR CIRCULAR-DICHROISM OF 2-PHOTON ABSORPTION AND SELF-DEFOCUSING OF NEODYMIUM LASER-RADIATION IN N-TYPE INP CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (02): : 199 - 200
- [9] IR ABSORPTION IN SEMIINSULATING GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (12): : 1342 - 1344
- [10] OPTICAL-BREAKDOWN OF SILICATE-GLASSES UNDER CONDITIONS OF 2-PHOTON ABSORPTION OF LASER-RADIATION KVANTOVAYA ELEKTRONIKA, 1983, 10 (07): : 1490 - 1492