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- [2] THE HEATING OF ELECTRONS IN COMPENSATED GE(AU, SB) VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1990, 31 (01): : 95 - 97
- [3] ANOMALOUS TEMPERATURE-DEPENDENCE OF HALL-MOBILITY IN COMPENSATED N-TYPE GE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 229 - 230
- [4] OSCILLATIONS IN THE IMPURITY PHOTOCONDUCTIVITY SPECTRA OF COMPENSATED N-TYPE GE-AU-SB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 581 - 582
- [7] LOW-TEMPERATURE MEASUREMENTS OF ELECTRICAL-ACTIVITY AND HALL-MOBILITY OF BORON IMPLANTED SILICON ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1985, 36 (05): : 723 - 732
- [8] LOW-TEMPERATURE MOBILITY IN A COMPENSATED SEMICONDUCTOR SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04): : 364 - 366