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- [3] ENERGY SPECTRUM OF CENTERS IN UNDOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 139 - &
- [4] RESONANT CHARGING OF DEEP CENTERS IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 790 - 792
- [5] ENERGY SPECTRUM OF GALLIUM-ARSENIDE - SILICON-NITRIDE INTERFACE STATES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1973, (05): : 59 - 64
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- [9] PHOTO PRODUCTION OF SURFACE RECOMBINATION CENTERS IN GALLIUM-ARSENIDE APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (03): : 233 - 237
- [10] DEEP TRANSITION-METAL CENTERS IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (09): : 1589 - &