2-DIMENSIONAL HOLE GAS IN ACCEPTOR DELTA-DOPED GAAS

被引：28
|
作者：
REBOREDO, FA
PROETTO, CR
机构：
[1] Centro Atómico Bariloche, Instituto Balseiro, Rio Negro
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.47.4655
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Self-consistent calculations of the hole-subband structure of acceptor delta-doped GaAs are reported. Numerical results are obtained for the self-consistent potential, hole density, and subband energy levels. Many-body effects beyond the Hartree approximation, such as exchange and correlation, are included in the parabolic or diagonal approximation of the full Luttinger Hamiltonian within the density-functional formalism and are shown to be important. Results are also reported for the less ideal case of a doping profile with a Gaussian distribution of dopants.
引用
收藏
页码：4655 / 4661
页数：7
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