LASER TRANSITIONS IN P-TYPE GAAS - SI

被引：18
|
作者：
ROSSI, JA
HOLONYAK, N
DAPKUS, PD
BURNHAM, RD
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 08期
关键词：
D O I：
10.1063/1.1658176
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3289 / &
相关论文
共 50 条
  • [1] LASER RECOMBINATION TRANSITION IN P-TYPE GAAS
    ROSSI, JA
    HOLONYAK, N
    DAPKUS, PD
    MCNEELY, JB
    WILLIAMS, FV
    APPLIED PHYSICS LETTERS, 1969, 15 (04) : 109 - &
  • [2] Numerical analysis of abrupt current transitions in p-type GaAs
    Kim, B. W.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (04) : 1543 - 1547
  • [3] CATHODOLUMINESCENCE OF P-TYPE GAAS
    PANKOVE, JI
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 298 - &
  • [4] REFLECTIVITY IN P-TYPE GAAS
    MCNICHOL.JL
    BURKIG, VC
    HAYES, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (08): : 854 - &
  • [5] ELECTRICAL-PROPERTIES OF P-TYPE LAYER IN SI-IMPLANTED GAAS
    SHIGETOMI, S
    MATSUMORI, T
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01): : K83 - K86
  • [6] ELECTROLUMINESCENCE OF P-TYPE GAAS DIODES
    VOROBKAL.FM
    GLINCHUK, KD
    PROKHORO.AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 125 - &
  • [7] LUMINESCENCE OF DEFORMED P-TYPE GAAS
    TUCK, B
    STURT, RM
    JOURNAL OF MATERIALS SCIENCE, 1973, 8 (02) : 295 - 297
  • [8] OHMIC CONTACTS TO P-TYPE GAAS
    ISHIHARA, O
    NISHITANI, K
    SAWANO, H
    MITSUI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (07) : 1411 - 1412
  • [9] P-type doping of GaAs nanowires
    Stichtenoth, D.
    Wegener, K.
    Gutsche, C.
    Regolin, I.
    Tegude, F. J.
    Prost, W.
    Seibt, M.
    Ronning, C.
    APPLIED PHYSICS LETTERS, 2008, 92 (16)
  • [10] PHOTOLUMINESCENCE OF COMPENSATED P-TYPE GAAS
    TUCK, B
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2161 - &
12345