EXPERIMENTAL INVESTIGATION OF N-MOS INVERSION-LAYERS IN THE ELECTRIC QUANTUM LIMIT

In this paper we report on the experimental determination of inversion electron charge density, silicon surface potential, and effective electron mobility vs oxide electric field, for NMOSFETs with gate oxide thickness Tox = 2.2 nm operating far beyond the limit of applicability of Boltzmann relationships in the inversion layer. We find that such oxides have the same values of destructive breakdown electric field, dielectric constant, and trap density at the silicon-oxide interface as "thick" oxides.