CONTINUOUSLY TUNABLE 1.5-MU-M MULTIPLE-QUANTUM-WELL GAINAS/GAINASP DISTRIBUTED-BRAGG-REFLECTOR LASERS

被引：108
作者：
KOCH, TL
KOREN, U
GNALL, RP
BURRUS, CA
MILLER, BI
机构：
[1] AT&T Bell Lab, United States
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 23期
关键词：
Light--Reflection - Optical Devices - Semiconducting Gallium Compounds;
D O I：
10.1049/el:19880978
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GaInAs/GaInAsP multiple-quantum-well active layers. We observe linewidths as low as 1.9 MHz, differential quantum efficiencies as large as 33%/front facet at 1.5 μm and rapid electronic access to all frequencies throughout a 1000 GHz range.
引用
收藏
页码：1431 / 1433
页数：3
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