INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS

被引：132
作者：
CHYNOWETH, AG
MCKAY, KG
机构：
来源：
PHYSICAL REVIEW | 1957年 / 106卷 / 03期
关键词：
D O I：
10.1103/PhysRev.106.418
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：418 / 426
页数：9
相关论文
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