NARROWING THE ENERGY GAP IN SEMICONDUCTORS BY COMPENSATION

被引：33

|

作者：

STERN, F

DIXON, JR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1959年 / 30卷 / 02期

关键词：

D O I：

10.1063/1.1735148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：268 / 269

页数：2

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