LATTICE-VIBRATIONS OF ULTRATHIN-LAYER (GAAS)N(ALAS)M SUPERLATTICES

被引:5
|
作者
PUSEP, YA [1 ]
TOROPOV, AI [1 ]
机构
[1] INST SEMICONDUCTOR PHYS, NOVOSIBIRSK 630090, USSR
关键词
D O I
10.1088/0953-8984/4/40/005
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present experimental results obtained by far-infrared reflection spectroscopy in the investigation of the optical phonons in ultrathin-layer (GaAs)n(AlAs)m superlattices (UTSLs). It was found that the frequencies of confined optical phonons in URSLs are much closer to the frequency of the corresponding bulk phonon at the centre of the Brillouin zone than in SLS with sufficiently thick layers. The influence of the barrier thickness was also studied.
引用
收藏
页码:L525 / L528
页数:4
相关论文
共 50 条
  • [1] RAMAN-SCATTERING FROM (ALAS)M(GAAS)N ULTRATHIN-LAYER SUPERLATTICES
    ISHIBASHI, A
    ITABASHI, M
    MORI, Y
    KANEKO, K
    KAWADO, S
    WATANABE, N
    PHYSICAL REVIEW B, 1986, 33 (04): : 2887 - 2889
  • [2] INTRINSIC LUMINESCENCE IN GAAS ALAS ULTRATHIN-LAYER SUPERLATTICES
    LEDENTSOV, NN
    TSUKADA, N
    PLOOG, K
    MATERIALS LETTERS, 1992, 14 (2-3) : 162 - 167
  • [3] STABILITY AND ELECTRONIC-STRUCTURE OF ULTRATHIN-LAYER SUPERLATTICES - (GAAS)N/(ALAS)N
    OSHIYAMA, A
    SAITO, M
    PHYSICAL REVIEW B, 1987, 36 (11): : 6156 - 6159
  • [4] Optical phonon damping in the ultrathin-layer GaAs/AlAs superlattices
    Dvoynenko, MM
    Goncharenko, AV
    Romaniuk, VR
    Venger, EF
    SUPERLATTICES AND MICROSTRUCTURES, 1999, 26 (05) : 333 - 342
  • [5] INFRARED REFLECTIVITY BY TRANSVERSE-OPTICAL PHONONS IN (GAAS)M/(ALAS)N ULTRATHIN-LAYER SUPERLATTICES
    SCAMARCIO, G
    TAPFER, L
    KONIG, W
    FISCHER, A
    PLOOG, K
    MOLINARI, E
    BARONI, S
    GIANNOZZI, P
    DEGIRONCOLI, S
    PHYSICAL REVIEW B, 1991, 43 (18): : 14754 - 14757
  • [6] CARBON ACCEPTOR LUMINESCENCE IN TYPE-I GAAS/ALAS ULTRATHIN-LAYER SUPERLATTICES
    LEDENTSOV, NN
    TSUKADA, N
    PLOOG, K
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 54 (03): : 261 - 264
  • [7] ULTRATHIN-LAYER (ALAS)M(GAAS)M SUPERLATTICES WITH M = 1,2,3 GROWN BY MOLECULAR-BEAM EPITAXY
    ISU, T
    JIANG, DS
    PLOOG, K
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (01): : 75 - 79
  • [8] RAMAN-SCATTERING BY LO PHONONS IN (GAAS)N1/(ALAS)N2 ULTRATHIN-LAYER SUPERLATTICES
    WANG, ZP
    HAN, HX
    LI, GH
    JIANG, DS
    PLOOG, K
    PHYSICAL REVIEW B, 1991, 43 (15): : 12650 - 12653
  • [9] INFRARED REFLECTIVITY AND RAMAN-SPECTRA OF (GAAS) M(ALAS)N ULTRATHIN LAYER SUPERLATTICES
    SCAMARCIO, G
    MOLINARI, E
    TAPFER, L
    LUGARA, M
    PLOOG, K
    SURFACE SCIENCE, 1992, 267 (1-3) : 430 - 433
  • [10] ULTRATHIN-LAYER (AlAs)m (GaAs)m SUPERLATTICES WITH <M% equals 1,2,3 GROWN BY MOLECULAR BEAM EPITAXY.
    Isu, T.
    Jiang, De-Sheng
    Ploog, K.
    Applied Physics A: Solids and Surfaces, 1987, A43 (01): : 75 - 79