CONDUCTANCE ANOMALIES DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES

被引：42
作者：
BENDANIEL, DJ
DUKE, CB
机构：
来源：
PHYSICAL REVIEW | 1967年 / 160卷 / 03期
关键词：
D O I：
10.1103/PhysRev.160.679
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：679 / +
页数：1
相关论文
共 31 条
[1]   SPACE-CHARGE EFFECTS ON ELECTRON TUNNELING [J].
BENDANIEL, DJ ;
DUKE, CB .
PHYSICAL REVIEW, 1966, 152 (02) :683-+
[2]   CRYSTAL CHEMISTRY + BAND STRUCTURES OF GROUP V SEMIMETALS + 4-6 SEMICONDUCTORS [J].
COHEN, MH ;
FALICOV, LM ;
GOLIN, S .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (03) :215-&
[3]   ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].
CONLEY, JW ;
DUKE, CB ;
MAHAN, GD ;
TIEMANN, JJ .
PHYSICAL REVIEW, 1966, 150 (02) :466-&
[4]  
DEWALD JF, 1963, ANN NY ACAD SCI, V101, P872
[5]  
DUKE CB, TO BE PUBLISHED
[6]   BISB ALLOY TUNNEL JUNCTIONS [J].
ESAKI, L ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1966, 16 (13) :574-&
[7]   STUDY OF ELECTRONIC BAND STRUCTURES BY TUNNELING SPECTROSCOPY - BISMUTH [J].
ESAKI, L ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1965, 14 (22) :902-&
[8]  
ESAKI L, UNPUBLISHED
[9]   NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J].
FANG, FF ;
HOWARD, WE .
PHYSICAL REVIEW LETTERS, 1966, 16 (18) :797-&
[10]   MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].
FOWLER, AB ;
FANG, FF ;
HOWARD, WE ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1966, 16 (20) :901-&
1234