DIELECTRIC-PROPERTIES OF SB2O3 THIN-FILM CAPACITORS

被引：4
|
作者：
KUMAR, JS
RAO, UVS
机构：
[1] P.G. Centre, Osmania University, Godavarikhani
来源：
JOURNAL OF THE LESS-COMMON METALS | 1990年 / 160卷 / 02期
关键词：
D O I：
10.1016/0022-5088(90)90396-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thin films of various thicknesses have been prepared from high purity (99.999%) Sb2O3 powders by thermal evaporation in a vacuum of 10-5 Torr. The capacitance and loss tangent of Sb2O3 film capacitors have been investigated in the temperature range from liquid nitrogen to 400 K and frequency range from 100 Hz to 16 kHz. The activation energy for the migration of charge carriers in Sb2O3 films has been calculated and it was found to be about 0.30 eV. The results obtained for dielectric properties of Sb2O3 film capacitors are presented and discussed. © 1990.
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页码：381 / 386
页数：6
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