EXTENDED THEORETICAL-ANALYSIS OF THE STEADY-STATE LINEAR BEHAVIOR OF ACCUMULATION-MODE, LONG-CHANNEL P-MOSFETS ON SOI SUBSTRATES

被引：20

作者：

FLANDRE, D ^{[1
]}

TERAO, A ^{[1
]}

机构：

[1] CTR NACL MICROELECTRON,E-08193 BARCELONA,SPAIN

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 08期

关键词：

D O I：

10.1016/0038-1101(92)90009-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The different conduction mechanisms occurring in thin-film accumulation-mode SOI p-channel MOSFETs have been investigated on the basis of experimental measurements and numerical simulations under all possible steady-state conditions with low drain-source voltage. Closed-form expressions for the front-gate threshold voltage as a function of back-gate bias and associated parameters have been derived and found to be in good agreement with measurements. Our extended analysis provides a basic tool which could prove useful for new characterization, modelling or application studies of accumulation-mode SOI MOSFETs.

引用

页码：1085 / 1092

页数：8