IMPROVEMENT IN GATE BREAKDOWN VOLTAGE FOR SOS DEVICES

被引：5
|
作者：
SHUTO, K
KATO, K
HASEGAWA, M
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 03期
关键词：
D O I：
10.1109/T-ED.1981.20321
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：242 / 245
页数：4
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