DETERMINATION OF BAND-GAP NARROWING AND HOLE DENSITY FOR HEAVILY C-DOPED GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY

被引：48
|
作者：
LU, ZH [1 ]
HANNA, MC [1 ]
MAJERFELD, A [1 ]
机构：
[1] UNIV COLORADO,DEPT ELECT & COMP ENGN,BOULDER,CO 80309
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 01期
关键词：
D O I：
10.1063/1.110877
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The energy band gap narrowing effect in heavily C-doped GaAs was investigated using photoluminescence spectroscopy. The band gap was determined over the hole density range 10(17) - 4 x 10(20) cm-3 at 10 and 300 K. The band gap data at low temperatures confirm the available theoretical calculations up to 10(20) cm-3. An unexpected temperature dependence of the observed band gap at high doping levels is discussed on the basis of carrier-phonon interactions. We present an analysis of the band gap narrowing effect that can be used for nondestructive measurement of hole densities in the range 10(17) - 4 x 10(20) CM-3.
引用
收藏
页码：88 / 90
页数：3
相关论文
共 50 条
  • [1] STUDY OF BAND-GAP NARROWING EFFECT AND NONRADIATIVE RECOMBINATION CENTERS FOR HEAVILY C-DOPED GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY
    YAN, BP
    LUO, JS
    ZHANG, QL
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) : 4822 - 4824
  • [2] Study of band-gap narrowing effect and nonradiative recombination centers for heavily C-doped GaAs by photoluminescence spectroscopy
    Yan, B.P.
    Luo, J.S.
    Zhang, Q.L.
    1600, American Inst of Physics, Woodbury, NY, USA (77):
  • [3] PLASMONS, PHOTOLUMINESCENCE, AND BAND-GAP NARROWING IN VERY HEAVILY DOPED N-GAAS
    YAO, H
    COMPAAN, A
    APPLIED PHYSICS LETTERS, 1990, 57 (02) : 147 - 149
  • [4] BAND-GAP NARROWING IN HEAVILY DOPED SILICON
    DHARIWAL, SR
    OJHA, VN
    SOLID-STATE ELECTRONICS, 1982, 25 (09) : 909 - 911
  • [5] BAND-GAP NARROWING IN HEAVILY DOPED SILICON AT 20 AND 300 K STUDIED BY PHOTOLUMINESCENCE
    WAGNER, J
    PHYSICAL REVIEW B, 1985, 32 (02): : 1323 - 1325
  • [6] A PERFORMED MODEL FOR BAND-GAP NARROWING OF HEAVILY DOPED SEMICONDUCTORS
    VANCONG, H
    CHARAR, S
    BRUNET, S
    SOLID STATE COMMUNICATIONS, 1982, 44 (08) : 1313 - 1315
  • [7] BAND-GAP NARROWING IN HEAVILY DEFECT-DOPED ZNO
    ROTH, AP
    WEBB, JB
    WILLIAMS, DF
    PHYSICAL REVIEW B, 1982, 25 (12): : 7836 - 7839
  • [8] BAND-GAP NARROWING IN HIGHLY DOPED N-TYPE AND P-TYPE GAAS STUDIED BY PHOTOLUMINESCENCE SPECTROSCOPY
    BORGHS, G
    BHATTACHARYYA, K
    DENEFFE, K
    VANMIEGHEM, P
    MERTENS, R
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4381 - 4386
  • [9] Band-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence
    Prucnal, S.
    Gao, K.
    Skorupa, I.
    Rebohle, L.
    Vines, L.
    Schmidt, H.
    Khalid, M.
    Wang, Y.
    Weschke, E.
    Skorupa, W.
    Grenzer, J.
    Huebner, R.
    Helm, M.
    Zhou, S.
    PHYSICAL REVIEW B, 2015, 92 (22)
  • [10] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS
    BERGGREN, KF
    SERNELIUS, BE
    PHYSICAL REVIEW B, 1981, 24 (04): : 1971 - 1986
12345