STUDY OF THE ELECTROSTATIC POTENTIAL IN A FINITE SEMICONDUCTOR LAYER AT EQUILIBRIUM

被引：1

作者：

FOURNET, G ^{[1
]}

KLEIDER, JP ^{[1
]}

机构：

[1] UNIV PARIS 11,ECOLE SUPER ELECT,F-91192 GIF SUR YVETTE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 04期

关键词：

D O I：

10.1016/0038-1101(93)90271-Q

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a general procedure which can be used in order to obtain the spatial variations of the electrostatic potential in a crystalline semiconductor layer of finite thickness. Different kinds of variations are found, depending on the electrostatic potential values at each interface and on the semiconductor thickness. General analytic expressions are given in the framework of the depletion approximation.

引用

页码：595 / 603

页数：9

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