The Characterization and Fabrication of Pyroelectric Infrared Sensor

The pyroelectric infrared (PIR) sensor with a calcium-modified lead titanate Pb(1-x)CaxTiO(3) thin film with x = 0.3 [PCT(30)] thin film have been successfully fabricated. A RF planar magnetron sputter was used to deposit PCT(30) thin film. A perovskite thin film can be obtained. From the properties measurement we can obtain the remanent polarization Pr = 25.3 mu c/cm(2) and coercive electric field Ec = 52.65 KV/cm. The pyroelectric coefficient was measured as a function of temperature which was 4.13 x 10(-4) C/m(2) K at 300 degree C. For the PIR performance measurement, the voltage response of the single PIR sensor is 723.5 VW-1 and the specific detectivity is 8.28 x 10 6 cmW(-1) at 0.3 Hz. In addition, a 2-D 8 x 8 element PIR sensor array is finished with fabricated PIR sensors.