BURIED CHANNEL CHARGE-COUPLED DEVICE ON GAS-SOURCE MBE GROWN INP

被引：2

作者：

HAN, KY ^{[1
]}

IYER, R ^{[1
]}

HAFICH, M ^{[1
]}

ROBINSON, GY ^{[1
]}

LILE, DL ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 19期

关键词：

CHARGE-COUPLED DEVICES; MOLECULAR-BEAM; EPITAXY; OPTOELECTRONICS;

D O I：

10.1049/el:19921144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first epitaxial-channel InP CCDs on semi-insulating substrates have been demonstrated using gas-source MBE grown layers. Channel isolation was achieved using a mesa etch, and the two level overlapping gate structure was insulated using indirect plasma enhanced CVD grown SiO2. Initial results indicate stale device operation with charge transfer efriciencies, at 1-3 MHz operating frequencies, of approximately 0.99.

引用

页码：1795 / 1797

页数：3

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