FAR INFRARED-ABSORPTION BY DONOR PAIRS IN STRONGLY COMPENSATED SEMICONDUCTORS

被引：0
|
作者：
SZWACKA, T [1 ]
BLINOWSKI, J [1 ]
机构：
[1] UNIV WARSAW,INST THEORET PHYS,PL-00681 WARSAW,POLAND
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 47期
关键词：
D O I：
10.1088/0953-8984/2/47/017
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of electric field and potential energy fluctuations on the absorption spectrum of shallow donors in strongly compensated semiconductors has been investigated. The ionized donor pairs D2+ with various interdonor separations and various degrees of polarity are shown to give rise to the broad absorption maximum at photon energies above that of the 1s-2p transition in an isolated donor atom. The height and shape of this maximum, depending on donor concentration, compensation and effectiveness of screening, carry information about the magnitude of potential energy fluctuations in strongly compensated semiconductors.
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页码：9435 / 9444
页数：10
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