LACK OF PHOTOEMISSION EVIDENCE FOR TAILING OF DENSITY OF STATES INTO ENERGY GAP OF AMORPHOUS SI

被引：26

作者：

PIERCE, DT

SPICER, WE

机构：

来源：

PHYSICAL REVIEW LETTERS | 1971年 / 27卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.27.1217

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1217 / &

共 20 条

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].

ALLEN, FG ;

GOBELI, GW .

PHYSICAL REVIEW, 1962, 127 (01) :150-&

[2] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[4] THEORY OF AMORPHOUS SEMICONDUCTORS [J].

COHEN, MH .

PHYSICS TODAY, 1971, 24 (05) :26-+

[5] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[6]

DiStefano T. H., 1970, Review of Scientific Instruments, V41, P180, DOI 10.1063/1.1684464

[7] EVIDENCE FOR A SHARP ABSORPTION EDGE IN AMORPHOUS GE [J].

DONOVAN, TM ;

SPICER, WE ;

BENNETT, JM .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1058-&

[8]

DONOVAN TM, TO BE PUBLISHED

[9]

Eden R. C., 1970, Review of Scientific Instruments, V41, P252, DOI 10.1063/1.1684483

[10]

FRITZSCHE H, TO BE PUBLISHED

← 1 2 →