BIAS-FIELD DISTRIBUTION OF HIGH-POWER P-N-N+ IMPATT DIODES

被引：0
|
作者：
MATSUMURA, M
机构：
来源：
ELECTRONICS & COMMUNICATIONS IN JAPAN | 1969年 / 52卷 / 08期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：144 / +
页数：1
相关论文
共 50 条
  • [1] EFFECT OF FIELD DISTRIBUTION OF SILICON P-N-N+ AVALANCHE DIODES ON EFFICIENCY
    OKUTO, Y
    KONDO, M
    MATSUMURA, M
    NAGASHIMA, I
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (02) : 230 - +
  • [2] 20-GHZ HIGH-POWER GAAS DDR-IMPATT DIODES WITH A P+-P-N-N+ STRUCTURE
    MIGITAKA, M
    DOI, A
    SAITO, K
    SEKINE, K
    PROCEEDINGS OF THE IEEE, 1974, 62 (01) : 141 - 142
  • [3] COMPUTER SIMULATION OF SILICON READ AND P-N-N+ IMPATT DIODES UNDER LARGE SIGNAL CONDITIONS
    MATSUMURA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (01) : 82 - +
  • [4] Effect of p-n Junction Overheating on Degradation of Silicon High-Power Pulsed IMPATT Diodes
    Belyaev, A. E.
    Basanets, V. V.
    Boltovets, N. S.
    Zorenko, A. V.
    Kapitanchuk, L. M.
    Kladko, V. P.
    Konakova, R. V.
    Kolesnik, N. V.
    Korostinskaya, T. V.
    Kritskaya, T. V.
    Kudryk, Ya. Ya.
    Kuchuk, A. V.
    Milenin, V. V.
    Ataubaeva, A. B.
    SEMICONDUCTORS, 2011, 45 (02) : 253 - 259
  • [5] HIGH-POWER, HIGH RELIABILITY P-N-JUNCTION GAAS IMPATT DIODES FOR J-BAND
    NISHITANI, K
    ISHIHARA, O
    SAWANO, H
    ISHII, T
    MITSUI, S
    MIKI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 93 - 97
  • [6] Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes
    A. E. Belyaev
    V. V. Basanets
    N. S. Boltovets
    A. V. Zorenko
    L. M. Kapitanchuk
    V. P. Kladko
    R. V. Konakova
    N. V. Kolesnik
    T. V. Korostinskaya
    T. V. Kritskaya
    Ya. Ya. Kudryk
    A. V. Kuchuk
    V. V. Milenin
    A. B. Ataubaeva
    Semiconductors, 2011, 45 : 253 - 259
  • [7] HIGH-POWER GaAs IMPATT DIODES.
    Kobayashi, Koichi
    Hirachi, Yasutake
    Toyama, Yoshikazu
    Fujitsu Scientific and Technical Journal, 1976, 12 (03): : 107 - 119
  • [8] THEORY OF FREQUENCY PROPERTIES OF LONG P-N-N+ DIODES FOR HIGH INJECTION LEVELS
    ARONOV, DA
    KOTOV, YP
    KOTOV, EP
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (08): : 1405 - &
  • [9] HIGH-POWER OPERATION MODE OF PULSED IMPATT DIODES
    BEHR, W
    LUY, JF
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (05) : 206 - 208
  • [10] HIGH-POWER MICROWAVE AMPLIFIER USING IMPATT DIODES
    BAINS, AS
    ELECTRONICS LETTERS, 1972, 8 (16) : 427 - &
12345