SEMIPERMANENT MEMORY USING CAPACITOR CHARGE STORAGE AND IGFET READ-OUT

被引：2
|
作者：
KAHNG, D
机构：
来源：
BELL SYSTEM TECHNICAL JOURNAL | 1967年 / 46卷 / 06期
关键词：
D O I：
10.1002/j.1538-7305.1967.tb01739.x
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1296 / +
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