DEGRADATION OF PHOTOLUMINESCENCE FROM QUANTUM-WELLS GROWN ON TOP OF LOW-TEMPERATURE BUFFERS

被引：0
|
作者：
SRINIVASAN, A
SHIH, YC
STREETMAN, BG
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期
关键词：
D O I：
10.1116/1.586129
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high-resistivity properties of low-temperature (200-300-degrees-C) molecular-beam-epitaxy-grown GaAs and AlGaAs have great potential for device applications. The purpose of this study is to examine the effect of low-temperature buffers (LTB) on the crystal quality of epilayers grown on top. Photoluminescence (PL) from quantum wells grown at regular growth temperatures (620-degrees-C) is found to be sensitive to changes in crystal quality introduced by the LTB. Limiting LT AlGaAs buffer thicknesses to a critical thickness is found necessary for growing layers with good quantum-well PL.
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页码：835 / 837
页数：3
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