EXPERIMENTAL TEST OF THE TRANSITION LAYER MODEL OF ATOMIC LAYER EPITAXY

被引:13
|
作者
JUZA, P
SITTER, H
HERMAN, MA
机构
关键词
D O I
10.1063/1.99988
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1396 / 1398
页数:3
相关论文
共 50 条
  • [1] A MODEL FOR THE ATOMIC LAYER EPITAXY OF GAAS
    YU, ML
    THIN SOLID FILMS, 1993, 225 (1-2) : 7 - 11
  • [2] ATOMIC LAYER EPITAXY
    SUNTOLA, T
    ACTA POLYTECHNICA SCANDINAVICA-ELECTRICAL ENGINEERING SERIES, 1989, (64): : 242 - 270
  • [3] Atomic layer epitaxy
    Niinisto, L
    CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 1998, 3 (02): : 147 - 152
  • [4] ATOMIC LAYER EPITAXY
    SIMPSON, M
    SMITH, P
    CHEMISTRY IN BRITAIN, 1987, 23 (01) : 37 - &
  • [5] ATOMIC LAYER EPITAXY
    SUNTOLA, T
    THIN SOLID FILMS, 1992, 216 (01) : 84 - 89
  • [6] ATOMIC LAYER EPITAXY
    GOODMAN, CHL
    PESSA, MV
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : R65 - R81
  • [7] ATOMIC LAYER EPITAXY
    SUNTOLA, T
    HYVARINEN, J
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1985, 15 : 177 - 195
  • [8] Atomic layer epitaxy
    Niinisto, Lauri
    Current Opinion in Solid State and Materials Science, 1998, 3 (02): : 147 - 152
  • [9] The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth
    Yang, Ren Bin
    Zakharov, Nikolai
    Moutanabbir, Oussama
    Scheerschmidt, Kurt
    Wu, Li-Ming
    Goesele, Ulrich
    Bachmann, Julien
    Nielsch, Kornelius
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2010, 132 (22) : 7592 - +
  • [10] ATOMIC LAYER EPITAXY OF ALGAAS
    GONG, JR
    JUNG, D
    ELMASRY, NA
    BEDAIR, SM
    APPLIED PHYSICS LETTERS, 1990, 57 (04) : 400 - 402